Job description
Infineon Technologies, Singapore, is seeking an experienced GaN Epitaxy Development Engineer to design epitaxial structures and optimize MOCVD processes. You will lead cross-functional efforts, mentor engineers, and help transition processes from R&D to high-volume manufacturing in a fast-paced environment. The ideal candidate has a Master’s (or PhD) in a relevant field and extensive hands-on III-V GaN growth experience, with strong data analytics and problem-solving skills. J-18808-Ljbffr